Identifying the dominant carrier of CdSe-based blue quantum dot light-emitting diode

نویسندگان

چکیده

Unlike red and green quantum dot light-emitting diodes (QLEDs), it is not clear whether a blue QLED an electron-dominated device. In this work, we identify that electron over-injected in QLEDs by impedance spectroscopy. By analyzing the capacitance–voltage characteristics of single-carrier devices, find built-in voltage electron-only device smaller than hole-only Therefore, injection more efficient hole QLEDs. To support our arguments, employ QD as fluorescent sensor to spatially investigate exciton recombination zone QLED. Consequently, observe close transport layer, shifts toward layer with increase applied bias. Our work provides practical method for identifying excess carrier QLEDs, could be other types

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Commercialization of Quantum Dot White Light Emitting Diode Technology

It is well known that the use of high-brightness LEDs for illumination has the potential to substitute conventional lighting and revolutionize the lighting industry over the next 10 to 20 years. However, successful penetration of this extremely large lighting market would require vast improvements in power conversion efficiencies, color index, light output per device and drastic reduction in co...

متن کامل

Wearable red–green–blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing

Deformable full-colour light-emitting diodes with ultrafine pixels are essential for wearable electronics, which requires the conformal integration on curvilinear surface as well as retina-like high-definition displays. However, there are remaining challenges in terms of polychromatic configuration, electroluminescence efficiency and/or multidirectional deformability. Here we present ultra-thin...

متن کامل

Blue light emitting diode exceeding 100 % quantum efficiency

1 Introduction GaN-based light-emitting diodes (LEDs) deliver the desired high efficiency only at relatively low injection current density [1]. At the elevated current densities required in practical high-brightness applications , the efficiency is substantially reduced. This efficiency droop phenomenon has been intensely investigated for a number of years, but the physical mechanisms behind it...

متن کامل

Investigation of the Effect of Recombination on Superluminescent Light-Emitting Diode Output Power Based on Nitride Pyramid Quantum Dots

In this article, the temperature behavior of output power of superluminescent light-emitting diode (SLED) by considering the effect of non-radiative recombination coefficient, non-radiative spontaneous emission coefficient and Auger recombination coefficients has been investigated. For this aim, GaN pyramidal quantum dots were used as the active region. The numerical method has been used to sol...

متن کامل

Thermally enhanced blue light-emitting diode

Articles you may be interested in Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer Appl. Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates J. Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting d...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2023

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0142735